Performance projections for ballistic carbon nanotube field-effect transistors

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3192-3194

  Guo, Jing ^a   Lundstrom, Mark ^a   Datta, Supriyo ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL CONDUCTANCE; DEVICE PERFORMANCE; DIGITAL APPLICATIONS; GATE CAPACITANCE; GATE GEOMETRY; IV CHARACTERISTICS; LOW-VOLTAGE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; ON-CURRENTS; PERFORMANCE LIMITS;

BALLISTICS; CARBON NANOTUBES; MOSFET DEVICES; NANOSENSORS; SEMICONDUCTING SILICON; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955987859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1474604     Document Type: Article

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