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Volumn 84, Issue 10, 2004, Pages 1771-1773

Frequency dependent characterization of transport properties in carbon nanotube transistors

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; FREQUENCIES; FREQUENCY RESPONSE; LEAKAGE CURRENTS; SIGNAL PROCESSING; SILICON; TRANSPORT PROPERTIES;

EID: 1842528906     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1655696     Document Type: Article
Times cited : (89)

References (18)
  • 14
    • 85039532169 scopus 로고    scopus 로고
    • note
    • gs is -0.8 V+ ∼0.5≈-0.3 V.
  • 18
    • 85039541954 scopus 로고    scopus 로고
    • ds is the dc component of the source-to-drain voltage defined in the insets of Figs. 1 and 3
    • ds is the dc component of the source-to-drain voltage defined in the insets of Figs. 1 and 3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.