Persistent n-type photoconductivity in p-type ZnO

Journal of Crystal Growth

Volumn 287, Issue 1, 2006, Pages 16-22

  Claflin, B ^a,b   Look, D C ^a,b   Park, S J ^c   Cantwell, G ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d ZN Technology   (United States)

Author keywords

A1. Mixed conduction; A1. Persistent photoconductivity (ppc); A1. Photo Hall effect; B1. p type ZnO; B1. Zinc oxide; B2. Semiconducting II VI materials

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; HALL EFFECT; OPTICAL DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS;

MIXED CONDUCTION; P-TYPE ZNO; PERSISTENT PHOTOCONDUCTIVITY (PPC); PHOTO-HALL-EFFECT;

ZINC OXIDE;

EID: 29944445194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.035     Document Type: Article

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