Ferroelectricity in Li-doped ZnO:X thin films and their application in optical switching devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5615-5618

  Nagata, T ^a   Shimura, T ^a   Nakano, Y ^a   Ashida, A ^a   Fujimura, N ^a   Ito, T ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Electrooptic effect; Ferroelectric; Optical switching; Wide band gap; Zinc oxide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTROOPTICAL EFFECTS; ENERGY GAP; FERROELECTRICITY; LITHIUM; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL SWITCHES; PERMITTIVITY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

OPTICAL INTEGRATED CIRCUITS (OIC);

FERROELECTRIC THIN FILMS;

EID: 0035455497     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5615     Document Type: Article

References (14)