Control of p- and n-type conductivity in sputter deposition of undoped ZnO

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1195-1197

  Xiong, Gang ^a   Wilkinson, John ^a   Mischuck, Brian ^a   Tuzemen S ^a   Ucer, K B ^a   Williams, R T ^a  

^a WAKE FOREST UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC OXYGEN; DEFECT FORMATION; FORMATION ENTHALPY; HALL MEASUREMENTS; N-TYPE CONDUCTIVITY; NITROGEN ACCEPTORS; NITROGEN SOURCES; OXYGEN PARTIAL PRESSURE; P TYPE ZNO; P-N HOMOJUNCTIONS; P-TYPE CONDUCTIVITY; SPUTTERING PLASMA; THEORETICAL STUDY; THERMAL EQUILIBRIUMS; ZNO;

DEFECTS; ENTHALPY; NITROGEN; ZINC OXIDE;

MOLECULAR OXYGEN;

EID: 79956010497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1449528     Document Type: Article

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