Growth of p-type zinc oxide films by chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 PART A, 1997, Pages

  Minegishi, Kazunori ^a   Koiwai, Yasushi ^a   Kikuchi, Yukinobu ^a   Yano, Koji ^a   Kasuga, Masanobu ^a   Shimizu, Azuma ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Hydrogen passivation; Nitrogen doping; p type ZnO

Indexed keywords

AMMONIA; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HYDROGEN; PASSIVATION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; ZINC OXIDE;

HYDROGEN PASSIVATION;

SEMICONDUCTING FILMS;

EID: 0031271578     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1453     Document Type: Article

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