Characterization of films and interfaces in n-ZnO/p-Si photodiodes

Thin Solid Films

Volumn 420-421, Issue , 2002, Pages 112-116

  Lee, J Y ^a   Choi, Y S ^a   Choi, W H ^a   Yeom, H W ^a   Yoon, Y K ^a   Kim, J H ^a   Im, S ^a  

^a Yonsei University   (South Korea)

Author keywords

Current voltage; Interface junction; Leakage current; N ZnO p Si photodiode; Photoelectric

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT TRANSMISSION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SILICON; SPUTTER DEPOSITION; THIN FILMS; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

JUNCTION INTERFACES;

PHOTODIODES;

EID: 17144461514     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00742-3     Document Type: Conference Paper

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