Chemical vapor deposition-formed p-type ZnO thin films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1342-1346

  Li, X ^a   Yan, Y ^a   Gessert, T A ^a   Perkins, C L ^a   Young, D ^a   DeHart, C ^a   Young, M ^a   Coutts, T J ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE CONTROL; THIN FILMS; ZINC OXIDE;

CHAMBER PRESSURE; DIETHYLZINC; HALL ANALYSIS; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROSCOPY; ZINC OXIDE THIN FILM;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042029714     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1584036     Document Type: Article

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