Growth of N-doped p-type ZnO films using ammonia as dopant source gas

Journal of Materials Science Letters

Volumn 22, Issue 4, 2003, Pages 249-251

  Huang, Jingyun ^a   Ye, Zhizhen ^a   Chen, Hanhong ^a   Zhao, Binghui ^a   Wang, Lei ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL ORIENTATION; FILM GROWTH; HOLE MOBILITY; SEMICONDUCTOR DOPING; SPUTTERING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 0037441019     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022347910122     Document Type: Article

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