Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2343-2346

  Alivov, Ya I ^a   Look, D C ^b   Ataev, B M ^c   Chukichev, M V ^d   Mamedov, V V ^c   Zinenko, V I ^a   Agafonov, Yu A ^a   Pustovit, A N ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b WRIGHT STATE UNIVERSITY   (United States)

^c INSTITUTE OF PHYSICS   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Electroluminescence; Implantation; Metal insulator semiconductor diodes; Zinc oxide

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ION IMPLANTATION; LIGHT EMISSION; NITROGEN; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION;

FULL WIDTH AT HALF MAXIMUM (FWHM); METAL-INSULATOR-SEMICONDUCTOR DIODES; ROOM TEMPERATURE (RT);

ZINC OXIDE;

EID: 4544341344     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.063     Document Type: Article

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