Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 703-706

  Guo, Jing ^a   Javey, Ali ^b   Dai, Hongjie ^b   Lundstrom, Mark ^c  

^a University of Florida   (United States)

^b STANFORD UNIVERSITY   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; GATE INSULATORS; PHONON SCATTERING; QUANTUM SIMULATIONS; BARRIER METALS; DESIGN OPTIMIZATION; GATE INSULATOR; HIGH-Κ; METAL CONTACTS; METALS A; PERFORMANCES ANALYSIS; PERFORMANCES DESIGN; SHORT CHANNELS;

CAPACITANCE; CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC INSULATORS; GATES (TRANSISTOR); GREEN'S FUNCTION; INTERFACES (MATERIALS); PHONONS; PRODUCT DESIGN; SCHOTTKY BARRIER DIODES; BALLISTICS; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; YARN;

MOSFET DEVICES; CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 21644440311     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Tans et al., Nature, 393, 49, 1998.
2. Martel et al., Appl. Phys. Lett., 73, 73, 1998
3. Javey et al., Nano Lett., 4, 1319, 2004.
4. Guo et al., Int., J. for Multiscale Computer Eng., in press, also available online: http://arxiv.org/cond-mat/0312551
5. Heinze et al., Phys. Rev. Lett., 89, 106801, 2002.
6. Radosavljevic et al. Appl. Phys. Lett., 83, 2435, 2003
7. Guo et al., IEEE Trans. on Elec. Dev., 51, 172, 2004.
8. Javey et al., Nature, 424, 654, 2003.
9. Guo et al., IEEE Trans. on Elec. Dev., 49, 1897, 2002.
10. Yao et al., Phys. Rev. Lett., 84, 2941, 2000.
11. Javey et al., Phys. Rev. Lett., 92, 106804, 2004.
12. Appenzeller et al., Phys. Rev. Lett., 92, 226802, 2004.
13. Lochtefeld et al., IEEE Elec. Dev. Lett., 22, 95, 2001.