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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4073-4078

Performance enhancement of vertical tunnel field-effect transistor with SiGe in the δp+ layer

(3) Bhuwalka, Krishna Kumar a Schulze, Jörg a Eisele, Ignaz a

a BUNDESWEHR UNIVERSITY MUNICH (Germany)

Author keywords

Band to band tunneling; SiGe; Subthreshold swing; Surface tunnel transistor; Vertical tunnel FET; Zener tunneling

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TUNNELING; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TUNNEL JUNCTIONS; ZENER EFFECT;

BAND-TO-BAND TUNNELING; FIELD EFFECT TRANSISTORS (FET); SUBTHRESHOLD SWING; SURFACE-TUNNEL TRANSISTORS; VERTICAL TUNNEL FET; ZENER TUNNELING;

MOSFET DEVICES;

EID: 4644251010 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.4073 Document Type: Article

Times cited : (201)

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