Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 2, Issue 3, 2003, Pages 175-180

  John, D L ^a   Castro, Leonardo C ^a   Clifford, Jason ^a   Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Carbon nanotube transistors; Electrostatic analysis; Field effect transistors (FETs); Nanotechnology; Schottky barriers; Semiconductor device modeling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; LAPLACE TRANSFORMS; NANOTECHNOLOGY; NUMERICAL METHODS; PERMITTIVITY; POISSON EQUATION; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBE TRANSISTORS; ELECTROSTATIC ANALYSIS; SEMICONDUCTOR DEVICE MODELING;

CARBON NANOTUBES;

EID: 2442562014     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.817228     Document Type: Article

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