Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts

Solid-State Electronics

Volumn 49, Issue 1, 2005, Pages 73-76

  Knoch, J ^a   Mantl, S ^a   Appenzeller, J ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Carbon nanotubes; Electronic transport; Field effect transistor; Schottky contacts

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); MOSFET DEVICES; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNFET); DRAIN CONTACTS; NANOELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 9544252190     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.002     Document Type: Article

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