Lateral scaling in carbon-nanotube field-effect transistors

Physical Review Letters

Volumn 91, Issue 5, 2003, Pages 583011-583014

  Wind, S J ^a,b   Appenzeller, J ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CARRIER MOBILITY; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES;

LATERAL SCALING;

MOSFET DEVICES;

EID: 0041416015     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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