Self-aligned carbon nanotube transistors with novel chemical doping

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 695-698

  Chen, Jia ^a   Klinke, Christian ^a   Afzali, Ali ^a   Chan, Kevin ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; DRAIN METAL CONTACTS; ELECTRON TRANSFER; HOLE CONDUCTION; AIR STABLE; ALIGNED CARBON NANOTUBES; CARBON NANOTUBE TRANSISTORS; CHARGE-TRANSFER MECHANISM; CHEMICAL DOPING; N-DOPING; NOVEL MATERIALS; P-DOPING; SELF-ALIGNED; TUNABILITIES;

BENZENE; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRIC CONTACTS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; LASER ABLATION; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBES; YARN;

CARBON NANOTUBES; THRESHOLD VOLTAGE;

EID: 21644440310     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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