Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 526-531

  Iwata, K ^a   Fons, P ^a   Yamada, A ^a   Matsubara, K ^a   Niki, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN; OXYGEN; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; TWINNING; ZINC OXIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034140970     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00613-2     Document Type: Article

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