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Volumn 13, Issue 40, 2001, Pages 9001-9010

Shallow versus deep hydrogen states in ZnO and HgO

(9) Cox, S F J a,b Davis, E A c King, P J C a Gil, J M d Alberto, H V d Vilao R C d Piroto Duarte, J d Ayres De Campos, N d Lichti, R L e

a RUTHERFORD APPLETON LABORATORY (United Kingdom)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

c UNIVERSITY OF LEICESTER (United Kingdom)

d UNIVERSITY OF COIMBRA (Portugal)

e TEXAS TECH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; IONIZATION; MERCURY COMPOUNDS; ROTATION; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE; ZIRCONIA;

DONOR IONIZATION ENERGIES; ELECTRON SPIN DENSITY; ELECTRONIC WAVEFUNCTION; HYDROGEN STATES; INTERSTITIAL HYDROGEN; MUON SPIN ROTATION; MUONIUM STATES; PARAMAGNETIC STATES;

HYDROGEN;

EID: 0035828802 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/40/316 Document Type: Article

Times cited : (49)

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