Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 287-289

  Rommeluere J F ^a   Svob, L ^a   Jomard, F ^a   Mimila Arroyo, J ^a,b   Lusson, A ^a   Sallet, V ^a   Marfaing, Y ^a  

^a CNRS   (France)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; ZINC OXIDE;

NITROGEN ACCEPTORS;

NITROGEN;

EID: 0042769335     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592621     Document Type: Article

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