Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes

Applied Physics Letters

Volumn 69, Issue 12, 1996, Pages 1680-1682

  Perlin, Piotr ^a,b   Osiński, Marek ^a   Eliseev, Petr G ^a,c   Smagley, Vladimir A ^a   Mu, Jian ^a   Banas, Michael ^a   Sartori, Philippe ^a,d  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^d TELECOM PARISTECH   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTROLUMINESCENCE; ELECTRON TUNNELING; MONOCHROMATORS; PHOTOMULTIPLIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; CARRIER MOBILITY; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; WAVELENGTH;

LIGHT EMITTING DIODES;

EID: 0030247198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117026     Document Type: Article

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