Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 531-534

  Mao, Lingfeng ^a   Tan, Changhua ^a   Xu, Mingzhen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Metal oxide semiconductor structure; Roughness; Tunneling

Indexed keywords

LEAKAGE CURRENTS; NUMERICAL ANALYSIS; SPURIOUS SIGNAL NOISE; SURFACE ROUGHNESS; ULTRATHIN FILMS;

DIRECT TUNNELING CURRENTS; ROOT-MEAN-SQUARE ROUGHNESS;

MOSFET DEVICES;

EID: 0035278195     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00038-7     Document Type: Article

References (18)