Scanning probe microscopy for silicon device fabrication

Molecular Simulation

Volumn 31, Issue 6-7, 2005, Pages 505-515

  Simmons, M Y ^a   Ruess, F J ^a   Goh, K E J ^a   Hallam, T ^a   Schofield, S R ^a,b   Oberbeck, L ^a   Curson, N J ^a   Hamilton, A R ^a   Butcher, M J ^a   Clark, R G ^a   Reusch, T C G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF NEWCASTLE   (Australia)

Author keywords

Lithography; Nanoelectronics; Scanning tunneling microscopy; Silicon

Indexed keywords

DIFFUSION; ENCAPSULATION; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEGREGATION (METALLOGRAPHY); ULTRAHIGH VACUUM;

ATOMIC-SCALE DEVICES; NANOELECTRONICS; SCANNING PROBE MICROSCOPY; SILICON DEVICE FABRICATION;

SEMICONDUCTING SILICON;

EID: 22144498431     PISSN: 08927022     EISSN: None     Source Type: Journal    
DOI: 10.1080/08927020500035580     Document Type: Conference Paper

References (50)

1. International Technology Roadmap for Semiconductors Update 2004, http://public.itrs.net
2. G. Binnig, H. Rohrer, C. Gerber, E. Weibel. Surface studies by scanning tunneling microscopy. Phys. Rev. Lett., 49, 57 (1982).
3. D.M. Eigler, E.K. Schweizer. Positioning single atoms with a scanning tunnelling microscope. Nature, 344, 524 (1990).
4. J.W. Lyding, T.-C. Shen, J.S. Hubacek, J.R. Tucker, G.C. Abeln. Nanoscale patterning and oxidation of H-passivated Si(100)-2 × 1 surfaces with an ultrahigh-vacuum scanning tunneling microscope. Appl. Phys. Lett., 64, 2010 (1994).
5. J.W. Lyding, T.-C. Shen, G.C. Abeln, G. Wang, J.R. Tucker. Nanoscale patterning and selective chemistry of silicon surfaces by UHV STM. Nanotechnology, 7, 128 (1996).
6. D.P. Adams, T.M. Mayer, B.S. Swartzentruber. Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist. J. Vac. Sci. Technol. B, 14, 1642 (1996).
7. T.-C. Shen, G. Wang, J.R. Tucker. Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning. Phys. Rev. Lett., 78, 1271 (1997).
8. T. Hashizume, S. Heike, M.I. Lutwyche, S. Watanabe, Y. Wada. Atom structures on the Si(100) surface. Surf. Sci., 386, 161 (1997).
9. G. Palasantzas, B. Ilge, L.J. Geelings, J.M.M. de Nijs, Diffusion, nucleation, and annealing of Co on the H-passivated Si(100) surface studied by UHV-STM. Surf. Sci., 509, 412 (1998).
10. M. Fujimori, Y. Terada, T. Hashiziume. Fabrication of four-probe fine electrodes on an atomically smooth Si(100)2 × 1-H surface. Nanotechnology, 15, 333 (2004).
11. T. Mitsui, R. Curtis, E. Ganz. Selective nanoscale growth of titanium on the Si(100) surface using an atomic hydrogen resist. J. Appl. Phys., 86, 1676 (1999).
12. G.C. Abeln, S.Y. Lee, J.W. Lyding, D.S. Thompson, J.S. Moore. Nanopatterning organic monolayers on Si(100) by selective chemisorption of norbornadiene. Appl. Phys. Lett., 70, 2747 (1997).
13. J.H. Cho, D.H. Oh, L. Kleinman. One dimensional molecular wire on hydrogenated Si(100). Phys. Rev. B, 65, 081310 (2002).
14. Y. Wada. Atom electronics: A proposal of atom/molecule switching devices. Surf. Sci., 386, 265 (1997).
15. J.R. Tucker, T.-C. Shen. Prospects for atomically ordered device structures based on STM lithography. Solid State Electron., 42, 1061 (1998).
16. R.A. Wolkow. A step toward making and wiring up molecular-scale devices. Jpn. J. Appl. Phys., 40, 4378 (2001).
17. J.L. O'Brien, S.R. Schofield, M.Y. Simmons, R.G Clark, A.S. Dzurak, N.J. Curson, B.E. Kane, N.S. McAlpine, M.E. Hawley, G.W. Brown. Towards the fabrication of phosphorus qubits for a silicon quantum computer. Phys. Rev. B, 64, 161401 (2001).
18. J.R. Tucker, T.-C. Shen. Can single-electron integrated circuits and quantum computers be fabricated in silicon? Int. J. Circ. Theor. Appl., 28, 553 (2000).
19. G.L. Snider, A.O. Orlov, I. Amlani. Quantum-dot cellular automata: Review and recent experiments. J. Appl. Phys., 85, 4283 (1999).
20. B.E. Kane. A silicon-based nuclear spin quantum computer. Nature, 393, 133 (1998).
21. S.R. Schofield, N.J. Curson, M.Y. Simmons, F.J. Rueß, T. Hallam, L.O. Oberbeck, R.G. Clark. Atomically precise placement of single dopants in silicon. Phys. Rev. Lett., 91, 136104 (2003).
22. N.J. Curson, S.R. Schofield, M.Y. Simmons, J. Oberbeck, J.L. O'Brien, R.G. Clark. STM characterisation of the Si-P heterodimer. Phys. Rev. B, 69, 195303 (2004).
23. 3 molecular precursors. Appl. Phys. Lett., 80, 1580 (2002).
24. L. Oberbeck, N.J. Curson, M.Y. Simmons, R. Brenner, A.R. Hamilton, S.R. Schofield, R.G. Clark. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer. Appl. Phys. Lett., 81, 3197 (2002).
25. F.J. Ruess, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, S.J. Schofield, N.J. Curson, R.G. Clark. Towards atomic scale device fabrication in silicon using scanning probe microscopy. Nano Lett., 4, 1969 (2004).
26. F.J. Ruess, L. Oberbeck, K.E.J. Goh, E. Gauja, M.Y. Simmons. Development of registration for the fabrication of nano- and atomic scale devices in silicon using scanning probe microscopy, in preparation (2004).
27. J. Shan, Y. Wang, R.J. Hamers. Adsorption and dissociation of phosphine on Si(100). J. Phys. Chem., 100, 4961 (1996).
28. H.F. Wilson, O. Warschkow, N.A. Marks, S.R. Schofield, N.J. Curson, P.V. Smith, M.W. Radny, D.R. McKenzie, M.Y. Simmons. Phosphine dissociation on the Si(100) surface. Phys. Rev. Lett., 93, 226102 (2004).
29. R.J. Hamers, Y. Wang, J. Shan. Atomic-level spatial distributions of dopants on silicon surfaces: Toward a microscopic understanding of surface chemical reactivity. Appl. Surf. Sci., 107, 25 (1996).
30. G.J. Pietsch. Hydrogen on Si - ubiquitous surface termination after wet-chemical processing. Appl. Phys. A, 60, 347 (1995).
31. H.-J. Gossmann, E.F. Schubert. Delta doping in silicon. Crit. Rev. Solid State Mater. Sci., 18, 1 (1993).
32. G.G. Jernigan, P.E. Thompson, M.E. Twigg. Analysis of growth on 75 nm Si(100) wafers by molecular beam epitaxy using in vacua scanning tunneling microscopy. Mater. Sci. Eng. B, 89, 133 (2002).
33. J.F. Nutzel, G. Abstreiter. Segregation and diffusion on semiconductor surfaces. Phys. Rev. B, 53, 13551 (1996).
34. P.M. Fahey, V. Griffin, J.D. Plummer. Point defects and dopant diffusion in silicon. Rev. Mod. Phys., 61, 289 (1989).
35. D.J. Eaglesham, H.-J. Gossmann, M. Cerullo. Limiting thickness for epitaxial growth and room temperature Si growth on Si(100). Phys. Rev. Lett., 65, 1227 (1990).
36. D.J. Eaglesham, H.-J. Gossman, M. Cerullo, L.N. Pfeiffer, K.W. West. Limiting epitaxial thickness of semiconductors and silicon down to room temperature. J. Cryst. Growth, 111, 833 (1991).
37. D.J. Eaglesham. Semiconductor molecular beam epitaxy at low temperatures. Appl. Phys. Rev., 77, 3597 (1995).
38. P.H. Wu, D.S. Lin. Growth mode in Si(100)-(2 × 1) epitaxy by low-temperature chemical-vapor deposition. Phys. Rev. B, 57, 12421 (1998).
39. D.-S. Lin, T.-S. Ku, T.-J. Sheu. Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study. Surf. Sci., 424, 7 (1999).
40. L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons, G. Bilger, R.G. Clark. Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy. Appl. Phys. Lett., 85, 1359 (2004).
41. P. Asoka-Kumar, H.-J. Gossmann, F.C. Unterwald, L.C. Feldman, T.C. Leung, H.L. Au, V. Talyanski, B. Neilsen, K.G. Lynn. Distribution of point defects in Si(100)/Si grown by low temperature molecular beam epitaxy and solid phase epitaxy. Phys. Rev. B, 48, 5345 (1993).
42. K.E.J. Goh, L. Oberbeck, M.Y. Simmons, A.R. Hamilton, R.G. Clark. Effect of encapsulation temperature on Si:P δ-doped layers. Appl. Phys. Lett., 85, 4953 (2004).
43. H. Fukuyama, E. Abrahams. Inelastic scattering time in two dimensional disordered metals. Phys. Rev. B, 27, 5976 (1983).
44. L. Liu, J.X. Yu, J.W. Lyding. Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy. Appl. Phys. Lett., 78, 386 (2001).
45. L. Liu, J.X. Yu, J.W. Lyding. Subsurface dopant-induced feature's on the Si(100)2 × 1: H surface: Fundamental study and applications. IEEE Trans. Nanotechnol., 1, 176 (2002).
46. G.W. Brown, H. Grube, M.E. Hawley. Observation of buried phosphorus dopants near clean Si(100)-(2 ×) surfaces with scanning tunneling microscopy. Phys. Rev. B, 70, 121301 (2004).
47. L.D. Bell, W.J. Kaiser, M.H. Hecht, F.J. Grunthaner. Direct control and characterisation of a schottky-barrier by scanning tunneling microscopy. Appl. Phys. Lett., 52, 278 (1988).
48. L.O. Oberbeck, NJ. Curson, T. Hallam, M.Y. Simmons, R.G. Clark. STM imaging of buried P atoms in hydrogen terminated Si for the fabrication of a Si:P quantum computer. Thin Solid Films, 464, 23 (2004).
49. L. Oberbeck, N.J. Curson, T.C.G. Reusch, M.Y. Simmons, R.G. Clark. Buried dopant imaging of phosphorus doped nanostructures in silicon using scanning tunneling microscopy, in preparation.
50. S. Hikami, A.I. Larkin, Y. Nagaoka. Spin-orbit interaction and magnetoresistance in the two dimensional random system. Prog. Theor. Phys., 63, 707 (1980).