Atomic-level spatial distributions of dopants on silicon surfaces: Toward a microscopic understanding of surface chemical reactivity

Applied Surface Science

Volumn 107, Issue , 1996, Pages 25-34

  Hamers, Robert J ^a   Wang, Yajun ^a   Shan, Jun ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; INFRARED SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ATOMIC LEVEL SPATIAL DOPANT DISTRIBUTIONS; CHEMICAL REACTIVITY; MOLECULAR ORBITAL CALCULATIONS;

SEMICONDUCTING SILICON;

EID: 0030566256     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00505-3     Document Type: Article

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