Atom electronics: A proposal of atom/molecule switching devices

Surface Science

Volumn 386, Issue 1-3, 1997, Pages 265-278

  Wada, Y ^a  

^a HITACHI LTD   (Japan)

Author keywords

Ab initio quantum chemical methods and calculations; Adatoms; Electrical transport (conductivity, resistivity, mobility, etc.); Gallium; Hydrogen; Scanning tunneling microscopy; Semiconducting surfaces; Silicon; Single crystal surfaces

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE STRUCTURE; TRANSISTORS;

ATOM ELECTRONICS; ATOM RELAY TRANSISTORS; MOLECULAR SINGLE ELECTRON SWITCHING TRANSISTORS;

SWITCHING SYSTEMS;

EID: 0031250853     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00318-X     Document Type: Article

References (30)

1. R.H. Dennard, F.H. Gaensslen, H. Yu, V.L. Rideout, E. Bassous, A.L. LeBlanc, IEEE J. Solid State Circuits 9 (1974) 256.
2. T. Sugano, VLSI Process Data Handbook, Science Forum, Tokyo, 1990; R.W. Keyes The future of the transistor, Phys. Today 45 (1992) 42.
3. T. Sugano, VLSI Process Data Handbook, Science Forum, Tokyo, 1990; R.W. Keyes The future of the transistor, Phys. Today 45 (1992) 42.
4. Y. Wada, T. Uda, M.I. Lutwyche, S. Kondo, S. Heike, J. Appl. Phys. 74 (1993) 7321.
5. C. Fiegna, H. Iwai, T. Wada, M. Saito, E. Sangiorgi, B. Ricco. IEEE Trans. Electron. Devices 41 (1994) 941.
6. B.L. Al'tshuler, P.A. Lee, R.A. Webb (Eds.), Mesoscopic Phenomena in Solids, North-Holland, Amsterdam, 1991.
7. Y. Wada, Trans. IEICE OME 93-54 (1994) 31.
8. P. von Allmen, K. Hess, Phys. Rev. B 52 (1995) 5243.
9. Y. Wada, Microelectron. Engng 30 (1996) 375.
10. G. Binnig, H. Rohrer, Ch. Gerber, E. Weibel, Phys. Rev. Lett. 49 (1982) 57.
11. D.M. Eigler, E.K. Schweizer, Nature 344 (1990) 524.
12. G. Binnig, C.F. Quate, C. Gerber, Phys. Rev. Lett. 56 (1986) 930.
13. S. Heike, Y. Wada, S. Kondo, M.I. Lutwyche, K. Murayama, T. Kuroda, Appl. Phys. Lett. 64 ( 1994) 1100.
14. S. Heike, Y. Wada, S. Kondo, M.I. Lutwyche, K. Murayama, T. Kuroda, Jap. J. Appl. Phys. 34 (1995) 110.
15. S. Heike, T. Hashizume, Y. Wada, Jap. J. Appl. Phys. 34 (1995) L1061.
16. S. Heike, T. Hashizume, Y. Wada, J. Appl. Phys. 80 (1996) 4182.
17. T. Hashizume, S. Heike, M.I. Lutwyche, S. Watanabe, Y./ Wada, Jap. J. Appl. Phys. 35 ( 1996) L1085.
18. S. Watanabe, Y. Ono, T. Hashizume, Y. Wada, Phys. Rev. B 52 (1995) 10768.
19. T. Hitasugi, T. Hashizume, S. Heike, S. Watanabe, Y. Wada, K. Kitazawa, Jap. J. Appl. Phys. 36 ( 1997) L361.
20. S. Watanabe, Y. Ono, T. Hashizume, Y. Wada, Phys. Rev. B 54 (1996) 17308.
21. F.T. Hong (Ed.) Molecular Electronics, Plenum Press, New York, 1989.
22. K.K. Likharev, IBM J. Res. Dev. 32 (1988) 144.
23. M.I. Lutwyche, Y. Wada, J. Appl. Phys. 75 (1994) 3654.
24. D.L. Pearson, J.S. Schumm, J.M. Tour, Macromolecules 27 (1994) 2348.
25. A. Ulman, An Introduction to Ultrathin Organic Films, Academic Press, San Diego, CA, 1991.
26. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, K. Seki, A room temperature single-electron memory device using fine-grain polycrystalline silicon, Technical Digest, IEEE International Electron Devices Meeting, IEEE, New York, 1993, p. 541.
27. M.I. Lutwyche, Y. Wada, Appl. Phys. Lett. 66 (1995) 2807.
28. K.R. Spangenberg, Vacuum Tubes, McGraw Hill, New York, 1948.
29. H.E. Bridgers, J.H. Scaff, J.N. Shive (Eds.), Transistor Technology, Nostrad, Princeton, NJ, 1958.
30. J. Kilby, IEEE Trans. Electron. Devices 23 (1976) 648.