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Volumn 86, Issue 3, 1999, Pages 1676-1679

Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROGEN; PASSIVATION; TITANIUM; TITANIUM COMPOUNDS;

EID: 0032606964     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370946     Document Type: Article
Times cited : (22)

References (42)
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    • note
    • 3 pieces of p-type, boron-doped wafers with ρ=0.1 Ω cm.
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    • 625 K marks the onset of hydrogen resist pattern degradation due to the hydrogen diffusion.
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