Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1359-1361

  Oberbeck, L ^a   Curson, N J ^a   Hallam, T ^a   Simmons, M Y ^a   Bilger, G ^b   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DOPING (ADDITIVES); INFRARED DEVICES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOSPHORUS; PYROMETERS; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SURFACE ROUGHNESS; THERMAL EFFECTS; ULTRAHIGH VACUUM;

ATOMIC SCALE DEVICES; ENERGY BARRIERS; INFRARED PYROMETERS; ROOM TEMPERATURE (RT);

SILICON;

EID: 4644338910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784881     Document Type: Article

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