Subsurface dopant-induced features on the Si(100)2 × 1:H surface: Fundamental study and applications

IEEE Transactions on Nanotechnology

Volumn 1, Issue 4, 2002, Pages 176-183

  Liu, Lequn ^a,b,c,d,e   Yu, Jixin ^b   Lyding, Joseph W ^{a,b,c,d,e,f,g}  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c AMERICAN PHYSICAL SOCIETY   (United States)

^d American Vacuum Society AVS   (United States)

^e Materials Research Society (MRS)   (United States)

^f Sigma Xi ^*  (United States)

^g AAAS   (United States)

Author keywords

Doping; Microscopy; Spectroscopy; Tunneling

Indexed keywords

DOPANTS; EMPTY STATES IMAGES; OPTIMAL SCANNING; TUNNELING;

COMPUTATIONAL METHODS; NUMERICAL METHODS; SCANNING TUNNELING MICROSCOPY; SCATTERING; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

SEMICONDUCTING SILICON;

EID: 4644295331     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.807391     Document Type: Conference Paper

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