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Volumn 14, Issue 3, 1996, Pages 1642-1649

Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist

Author keywords

[No Author keywords available]

Indexed keywords


EID: 5544242491     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589204     Document Type: Article
Times cited : (69)

References (40)
  • 31
    • 5544320128 scopus 로고    scopus 로고
    • note
    • Cross section values and beam widths presented here should actually be considered upper limits. The process of converting the STM images to line profiles of H-free Si sites overestimates the coverage of H-free Si sites. Bright areas in the STM image associated with H-free Si sites are enlarged by the limited resolution of the tip.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.