Prospects for atomically ordered device structures based on STM lithography

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1061-1067

  Tucker, J R ^a   Shen, T C ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; COMPUTATIONAL METHODS; ELECTRIC CHARGE; ELECTRIC IMPEDANCE; ELECTRON TRANSPORT PROPERTIES; ENCAPSULATION; FUNCTIONS; LITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SELF-ORDERED DONOR/ACCEPTOR ARRAYS;

HETEROJUNCTIONS;

EID: 0032116551     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00302-X     Document Type: Article

References (14)

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3. Shen, T.-C., Wang, C., Tucker, J. R., unpublished.
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