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Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 133-140

Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy

(3) Jernigan, Glenn G a Thompson, Phillip E a Twigg, Mark E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

B doping; Molecular beam epitaxy; Sb doping; Scanning tunneling microscopy; Si homoepitaxy; SiGe heteroepitaxy

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACES; VACUUM;

HETEROEPITAXIAL GROWTH; HOMOEPITAXIAL GROWTH;

SILICON WAFERS;

EID: 0037074876 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00819-4 Document Type: Conference Paper

Times cited : (10)

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