Observation of buried phosphorus dopants near clean Si(100)-(2 × 1) surfaces with scanning tunneling microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 12, 2004, Pages

  Brown, Geoffrey W ^a   Grube, Holger ^a   Hawley, Marilyn E ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; PHOSPHORUS; SILICON;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL BOND; ELECTRIC POTENTIAL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 19744381644     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.121301     Document Type: Article

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16. The surface photovoltage results in Ref. [15] suggest that the surface bands act as an extension of the conduction band into the gap. In that work, the photoinduced band bending on Si(100)-(2 × 1) is not affected by the defect band, which is fully JH within the gap. However, the band bending does stop when the antibonding surface states reach the Fermi level, as it does when HM the band edges reach the Fermi level on materials without surface states.