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Volumn 424, Issue 1, 1999, Pages 7-18

Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; DESORPTION; DISSOCIATION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; MORPHOLOGY; PHOTOEMISSION; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SILICON;

EID: 0345103258     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00943-1     Document Type: Article
Times cited : (75)

References (20)
  • 1
    • 0003679027 scopus 로고
    • New York: McGraw-Hill. Chap. 2
    • Pearce C.W. VLSI Technology. 1983;McGraw-Hill, New York. Chap. 2.
    • (1983) VLSI Technology
    • Pearce, C.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.