Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1580-1582

  Shen, T C ^a   Ji, J Y ^a   Zudov, M A ^b   Du, R R ^b   Kline, J S ^c   Tucker, J R ^c  

^a UTAH STATE UNIVERSITY   (United States)

^b UNIVERSITY OF UTAH   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER ACTIVATION; CONDUCTIVITY MEASUREMENTS; DELTA LAYERS; DOPING LAYERS; HIGH-DENSITY; LOW TEMPERATURES; MOLECULAR PRECURSOR; POSSIBLE FUTURES; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPES; SI EPITAXY; SURFACE COVERAGES; TWO-DIMENSIONAL CONDUCTORS; ULTRADENSE;

CARRIER MOBILITY; COMPUTATIONAL LINGUISTICS; HALL MOBILITY; PHOSPHORUS; QUANTUM COMPUTERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956021287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456949     Document Type: Article

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