SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

(5) Nakashima, S a Mitani, T a Senzaki, J a Okumura, H a Yamamoto, T b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; IMPLANTATION DOSES; RAMAN ANALYSIS; RAMAN MICROSCOPY;

ANNEALING; HYDROGEN; ION IMPLANTATION; LASERS; NONDESTRUCTIVE EXAMINATION; PHONONS; PHOSPHORUS; PRECIPITATION (CHEMICAL); REDUCTION; SILICON CARBIDE; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

RAMAN SCATTERING;

EID: 21744458723 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1931039 Document Type: Article

Times cited : (57)

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