Characterization of low temperature GaAs grown by molecular beam epitaxy

Applied Surface Science

Volumn 92, Issue , 1996, Pages 66-69

  Lee, W C ^a   Hsu, T M ^a   Chyi, J I ^a   Lee, G S ^a   Li, W H ^a   Lee, K C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CHARACTERIZATION; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

EPILAYERS; FREQUENCY SPLITTING; HIGH RESOLUTION DOUBLE CRYSTAL X RAY DIFFRACTION; LATTICE MISMATCH; LOW TEMPERATURE GALLIUM ARSENIDE; X RAY DIFFRACTION ROCKING CURVES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030562463     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00204-9     Document Type: Article

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