The solubility and defect equilibrium of the n-type dopants nitrogen and phosphorus in 4H-SiC: A theoretical study

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 715-718

  Bockstedte, Michel ^a   Mattausch, Alexander ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Critical nitrogen concentration; Electrical activation; Nitrogen vacancy complex

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; FERMI LEVEL; HYDROGEN; IMPURITIES; PASSIVATION; PHOSPHORUS; PRECIPITATION (CHEMICAL); STOICHIOMETRY; THERMODYNAMICS;

BAND GAP; CRITICAL NITROGEN CONCENTRATION; ELECTRICAL ACTIVATION; NITROGEN-VACANCY COMPLEX;

SILICON CARBIDE;

EID: 8744267307     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.715     Document Type: Conference Paper

References (9)

1. M. Laube et al., J. Appl. Phys. 92 (2001), p. 549.
2. D. Schulz et al., Mater. Sci. Forum 338-342 (2000), p. 87.
3. K. Semmelroth et al., Mater. Sci. Forum 433-438 (2003), p. 63.
4. M. Bockstedte, A. Mattausch, and O. Pankratov, Phys. Rev. B 68 (2003), p. 205201.
5. G. A. Baraff and M. Schlüter, Phys. Rev. B 30 (1984), p. 1853.
6. G. Wellenhofer and U. Rössler, phys. stat. sol. (b) 202 (1997), p. 107.
7. D. Åberg, A. Hallén, P. Pellegrino, and B. G. Svensson, Appl. Phys. Lett. 78 (2001), p. 2908.
8. V. S. Vainer and V. A. Il'in, Sov. Phys. Solid State 23 (1981), p. 1432.
9. U. Gerstmann, E. Rauls, T. Frauenheim, and H. Overhof, Phys. Rev. B 67 (2003), p. 205202.