Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 472-474

  Feng, Z C ^a   Chua, S J ^a   Tone, K ^b   Zhao, J H ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001619327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124412     Document Type: Article

References (30)

1. R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, Proc. IEEE 79, 677 (1991).
2. J. A. Powell, P. Pirouz, and W. J. Choyke, in Semiconductor Interfaces, Microstructures and Devices: Properties and Application, edited by Z. C. Feng (IOP, Bristol, 1993), p. 257.
3. G. L. Harris, in Properties of Silicon Carbide, edited by G. L. Harris (Short Run, Exeter, 1995).
4. W. J. Choyke, H. Matsunami, and G. Pensl, Phys. Status Solidi A 161 (1997).
5. M. M. Anikin, P. A. Ivanov, A. A. Lebedev, S. N. Pytko, A. M. Strel'chuk, and A. L. Syrkin, in Semiconductor Interfaces and Microstructures, edited by Z. C. Feng (World Scientific, Singapore, 1992), p. 280.
6. M. V. Rao, P. Griffiths, O. W. Holland, G. Kelner, J. A. Freitas, Jr., D. S. Simons, P. H. Chi, and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
7. Y. Hirano and T. Inada, J. Appl. Phys. 77, 1020 (1995).
8. L. Calcagno, M. G. Crimaldi, and P. Musumeci, J. Mater. Res. 12, 1727 (1997).
9. T. Troffer, C. Peppermuller, G. Pensl, K. Rottner, and A. Schoner, J. Appl. Phys. 80, 3739 (1996).
10. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, J. Electron. Mater. 24, 235 (1995).
11. J. Gardner, A. Edwards, M. V. Rao, N. Papanicolaou, G. Kelner, O. W. Holland, M. Ghezzo, and J. Kretchmer, J. Appl. Phys. 83, 5118 (1998).
12. M. V. Rao, P. Griffiths, J. Gardner, O. W. Holland, M. Ghezzo, J. Hretchmer, G. Keiner, and J. A. Freitas, J. Electron. Mater. 25, 75 (1996).
13. M. Ghezzo, E. Powney, J. Kretchmer, and J. J. Kopanski, Appl. Phys. Lett. 63, 1206 (1993).
14. M. V. Rao, J. A. Gardner, P. H. Chi, O. W. Holland, G. Keiner, J. Kretchmer, and M. Ghezzo, J. Appl. Phys. 81, 6635 (1997).
15. R. Nipoti, E. Albertazzi, M. Bianconi, R. Lotti, G. Lulli, M. Cervera, and A. Carnera, Appl. Phys. Lett. 70, 3425 (1997).
16. H. Itoh, T. Ohshima, Y. Aoki, K. Abe, M. Yoshikawa, I. Nashiyama, H. Okumura, and S Tanigawa, J. Appl. Phys. 82, 5339 (1997).
17. B. Canut, S. Ramos, J.-A. Roger, J.-P. Chante, M.-L. Locatelli, and D. Planson, Mater. Sci. Eng., B 46, 267 (1997).
18. R. Nipoti, E. Albertazzi, M. Bianconi, R. Rotti, G. Lulli, M. Cervera, and A. Carnera, Appl. Phys. Lett. 70, 3425 (1997).
19. V. Heera and W. Skorupa, Mater. Res. Soc. Symp. Proc. 438, 241 (1997).
20. J. H. Zhao, K. Tone, S. R. Weiner, M. A. Caleca, H. Du, and S. P. Withrow, IEEE Electron Device Lett. 18, 375 (1997).
21. K. Tone, S. R. Weiner, and J. H. Zhao, Electron. Lett. 33, 1904 (1997).
22. J. Schneider and K. Maier, Physica B 185, 199 (1993).
23. D. W. Feldman, J. H. Parker, Jr., W. J. Choyke, and L. Patrick, Phys. Rev. 170, 698 (1968).
24. M. Gorman and S. A. Solin, Solid State Commun. 15, 761 (1974).
25. V. N. Makarov, D. A. Plotkin, and A. V. Suvorov, Inst. Phys. Conf. Ser. 137, 545 (1994).
26. W J. Choyke, Z. C. Feng, and J. A. Powell, J. Appl. Phys. 64, 3163 (1988).
27. W. J. Choyke and E. D. Palik, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, Orlando, 1985), p. 587.
28. G. Derst, C. Wilbertz, K. L. Bhatia, W. Krätschmer, and S. Kalbitzer, Appl. Phys. Lett. 54, 1722 (1989).
29. M. Yoganathan, W. J. Choyke, R. P. Devaty, and P. G. Neudeck, J. Appl. Phys. 80, 1763 (1996).
30. D. N. Talwar and Z. C. Feng, Phys. Rev. B 44, 3191 (1991).