Comparative evaluation of implantation damage produced by N and P ions in 6H-SiC

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 875-880

  Camassel, J ^a   Blanque, S ^a,b   Mestres, N ^c   Godignon, P ^b   Pascual, J ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c Campus UAB   (Spain)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE EVALUATIONS; DAMAGE CROSS-SECTION; IMPLANTATION DAMAGE; MICRO RAMAN SPECTROSCOPY; N IMPLANTATION; ROOM TEMPERATURE;

ATOMIC FORCE MICROSCOPY; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE ROUGHNESS;

IONS;

EID: 8644226594     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306246     Document Type: Conference Paper

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