Raman investigation of SiC polytypes

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 39-64

  Nakashima, S ^a   Harima, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ION IMPLANTATION; NONDESTRUCTIVE EXAMINATION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STACKING FAULTS; STRESS ANALYSIS;

CARRIER MOBILITY; SILICON CARBIDE POLYTYPES;

SILICON CARBIDE;

EID: 0031190138     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L     Document Type: Article

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