MeV P ion implantation damage and rapid thermal annealing effects in Fe-doped InP using Raman scattering

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2127-2131

  Shi, Bo Rong ^a   Cue, Nelson ^a   Xu, Tian Bing ^b   Au, Standey ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001610462     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363106     Document Type: Article

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