Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 799-802

  Tanaka, Yasunori ^a   Tanoue, Hisao ^b   Arai, Kazuo ^a  

^a National Institute of Advanced Industrial Science and Technology   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dopant; Excimer laser annealing; Ion implantation; Multiple step irradiation; Phosphorus; XeCI

Indexed keywords

CHEMICAL ACTIVATION; DOPING (ADDITIVES); EXCIMER LASERS; ION IMPLANTATION; IONS; IRRADIATION; PHOSPHORUS; SILICON CARBIDE; SURFACE ROUGHNESS; TEMPERATURE; ANNEALING; ELECTRIC RESISTANCE;

ELECTRICAL ACTIVATION EFFICIENCY; EXCIMER LASER ANNEALING; FURNACE ANNEALING; ION-IMPLANTED DOPANTS; LASER ANNEALING; LOW-TEMPERATURE ACTIVATION; THERMAL-ANNEALING; XECI;

ANNEALING; SILICON CARBIDE;

EID: 0036435365     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.799     Document Type: Conference Paper

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