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Volumn 315, Issue 1-3, 2002, Pages 56-63

Raman study on H+-implantation effects in highly doped n-GaAs

Author keywords

Gallium arsenide; Ion implantation; Raman scattering

Indexed keywords

CARRIER CONCENTRATION; HYDROGEN; ION IMPLANTATION; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

EID: 0036536513     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01467-3     Document Type: Article
Times cited : (13)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.