Donor ion-implantation doping into SiC

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 334-340

  Rao, Mulpuri V ^a   Tucker, J ^a   Holland, O W ^b   Papanicolaou, N ^c   Chi, P H ^d   Kretchmer, J W ^e   Ghezzo, M ^e  

^a George Mason University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; ARSENIC; CARRIER CONCENTRATION; ION IMPLANTATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; STATISTICAL MECHANICS; THERMODYNAMIC STABILITY;

ELECTRICAL ACTIVATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032681152     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0036-8     Document Type: Article

References (34)

1. D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Hennesy and G. Michon, Solid-State Electron. 39, 1531 (1996).
2. B.J. Baliga, Inst. Phys. Conf. Ser. 142, 1 (1996).
3. J.A. Cooper, Jr., M.R. Melloch, J.M. Woodall, J. Spitz, K.J. Schoen and J.P. Henning, Mater. Sci. Forum 264-268, 895 (1998).
4. L.V. Rozario, L.P. Sadwick, R.J. Hwu and D.B. King, Proc. of Fourth Intl. High Temp. Electron. Conf. (HiTec), Albuquerque, NM, June 1998, (1998), p. 29.
5. S. Sriram, G. Augustine, A.A. Burk, Jr., R.C. Glass, H.M. Hobgood, P.A. Orphanos, L.B. Rowland, T.J. Smith, C.D. Brandt, M.C. Driver and R.H. Hopkins, IEEE Electron Device Lett. 17, 369 (1996).
6. C.E. Weitzel, J.W. Palmour, C.H. Carter, Jr. and K. Nordquist, IEEE Electron Dev. Lett. 15, 406 (1994).
7. G.L. Harris (ed), Properties of Silicon Carbide, (London: INSPEC, IEE, 1995).
8. T. Stiasny and R. Helbig, Inst. Phys. Conf. Ser. No 142, (Bristol, U.K.: Institute of Physics, 1996), p. 389.
9. D.J. Larkin, P.G. Neudeck, J.A. Powell and L.G. Matus, Inst. Phys. Conf. Ser. 137, (Bristol, U.K.: Institute of Physics, 1993), p. 51.
10. N.T. Bagraev, L.E. Klyachkin and V.L. Sukhanov, Solid State Electron. 36, 1741 (1993).
11. J. Gardner, M.V. Rao, O.W. Holland, G. Kelner, D.S. Simmons, P.H. Chi, J.M. Andrews, J. Kretchmer and M. Ghezzo, J. Electron. Mater. 25, 885 (1996).
12. J. Gardner, A. Edwards, M.V. Rao, N. Papanicolaou, G. Kelner, O.W. Holland, M.A. Capano, M. Ghezzo and J. Kretchmer, J. Appl. Phys. 83, 5118 (1998).
13. J. Gardner, M.V. Rao, Y.L. Tian, O.W. Holland, E.G. Roth, P.H. Chi and I. Ahmad, J. Electron. Mater. 26, 144 (1997).
14. D. Dwight, M.V. Rao, O.W. Holland, G. Kelner, P.H. Chi, J. Kretchmer and M. Ghezzo, J. Appl. Phys. 82, 5327 (1997).
15. T. Kimoto, N. Inoue and H. Matsunami, Phys. Stat. Sol. (a) 162, 263 (1997).
16. T. Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima and H. Matsunami, Mater. Sci. Forum 264-268, 675 (1998).
17. N. Inoue, A. Itoh, T. Kimoto, H. Matsunami, T. Nakata and M. Inoue, J. Electron. Mater. 26, 165 (1997).
18. S. Seshadri, G.W. Eldridge, A.K. Agarwal, A.A. Burk and G. Augustine, Appl. Phys. Lett. 72, 2026 (1998).
19. T. Troffer, C. Peppermuller, G. Pensl, K. Rottner and A. Schoner, J. Appl. Phys. 80, 3739 (1996).
20. M.V. Rao, J. Gardner, P.H. Chi, G. Kelner, J. Kretchmer and M. Ghezzo, J. Appl. Phys. 81, 6635 (1997).
21. K. Abe, T. Ohshima, H. Itoh, Y. Aoki, M. Yoshikawa, I. Nashiyama and M. Iwami, Mater. Sci. Forum 264-268, 721 (1998).
22. S.K. Ghandhi, VLSI Fabrication Principles (Silicon and Gallium Arsenide), (New York: JohnWiley, 1994), Chapters on Diffusion and Ion-Implantation.
23. J.W. Peterson, G. Weyer, H.L. Nielsen, S. Damgaard, W.J. Choyke and H. Andreasen, Hyperfine Interactions 23, 17 (1985).
24. W. Wesch, A. Heft, E. Wendler, T. Bachmann and E. Glaser, Nucl. Instr. Meth. Phys. Res. B. 96, 335 (1995).
25. O.J. Marsh and H.L. Dunlap, Rad. Effects 6, 301 (1970).
26. O.J. Marsh, Silicon Carbide 1973, ed. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan (Columbia, SC: University of South Carolina press 1974), p. 471.
27. L.A. Christel and J.F. Gibbons, J. Appl. Phys. 52, 5050 (1981).
28. E. Morvan, J. Monserrat, J. Rebollo, D. Flores, X. Jorda, M.L. Locatelli and L. Ottaviani, Mater. Sci. Forum 264, 737 (1998).
29. J.R. Jenny, M. Skowronski, W. C. Mitchel, H.M. Hobgood, R. C. Glass, G. Augustine and R.H. Hopkins, Silicon Carbide and Related Materials 1995, 142 (Bristol, U.K.: Institute of Physics, 1996), p. 313.
30. R.C. Glass, G. Augustine, V. Balakrishna, H.M. Hobgood, R.H. Hopkins, J. Jenny, M. Skowronski and W.J. Choyke, Silicon Carbide and Related Materials 1995, 142, (Bristol, U.K.: Institute of Physics, 1996), p. 37.
31. J.F. Ziegler, J.P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids, (New York: Pergamon, 1985).
32. R.G. Wilson, Radiat. Effects 46, 141 (1980).
33. W.K. Hofker, Philips Res. Rep. Supl. 8, 41 (1975).
34. S. Ahmed, C.J. Barbero, T.W. Sigmon and J.W. Erickson, J. Appl. Phys. 77, 6194 (1995).