Investigations on H+ and He+ implantation effects in n-InP using Raman scattering

Physica B: Condensed Matter

Volumn 262, Issue 3-4, 1999, Pages 329-335

  Dharmarasu, N ^a   Sundarakkannan, B ^b   Kesavamoorthy, R ^b   Nair, K G M ^b   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; HELIUM; HIGH TEMPERATURE APPLICATIONS; HYDROGEN; ION IMPLANTATION; RAMAN SCATTERING; SEMICONDUCTOR GROWTH;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032624106     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)01104-1     Document Type: Article

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