Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

Journal of Applied Physics

Volumn 88, Issue 4, 2000, Pages 1771-1775

  Cima, C A ^a   Boudinov, H ^a   De Souza, J P ^a   Suprun Belevich, Yu ^a   Fichtner, P F P ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004779739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1305928     Document Type: Article

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