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Volumn 85, Issue 12, 1999, Pages 8353-8361

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001069480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370682     Document Type: Article
Times cited : (98)

References (51)
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    • note
    • More recent measurements on thick homoepitaxial layers with low doping grown on nitrogen-doped substrates and on bulk 4H SiC substrates from a different supplier show a decrease of the oxide overlayer (now 11 Å) and surface roughness. This does not change the values of the dielectric function in Table I within our accuracy. Usually, there is no difference between the dielectric functions determined from bulk and homoepitaxial SiC samples. However, some homoepitaxial commercial films show interference oscillations due to a damaged surface region resulting from problems during the epitaxial growth or substrate preparation. Therefore, it is wise to use spectroscopic ellipsometry for quality control of commercial SiC samples.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.