Electrical and microstructural properties of highly boron-implantation doped 6H-SiC

Journal of Applied Physics

Volumn 89, Issue 6, 2001, Pages 3162-3167

  Panknin, D ^a   Wirth, H ^a   Mucklich A ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039782107     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1333743     Document Type: Article

References (12)

1. W. J. Choyke and G. Pensl, Mater. Res. Soc. Symp. Proc. 3, 25 (1997).
2. O. Takemura, T. Kimoto, H. Matsunami, T. Nakata, M. Watanabe, and M. Inoue, Mater. Sci. Forum 264-268, 701 (1998).
3. H. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, J. Electron. Mater. 25, 879 (1996).
4. M. Laube, G. Pensl, and H. Itoh, Appl. Phys. Lett. 74, 2292 (1999).
5. G. Pensl, V. V. Afanasev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H. P. Strunk, M. Maier, and W. J. Choyke, Inst. Phys. Conf. Ser. 142, 350 (1996).
6. P. O. A. Persson, Q. Wahab, L. Hultman, N. Nordell, A. Schöner, K. Rottner, E. Olsson, and M. K. Linnarsson, Mater. Sci. Forum 264-268, 413 (1998).
7. N. Nordell, A. Schöner, K. Rottner, P. O. A. Persson, Q. Wahab, L. Hultman, M. K. Linnarsson, and E. Olsson, J. Electron. Mater. 27, 833 (1998).
8. M. Ghezzo, D. Brown, E. Downey, and J. Kretchmer, Appl. Phys. Lett. 63, 1206 (1993).
9. Z. V. Dzhibuti, N. D. Dolidze, G. Sh. Narsiya, G. L. Eristavi, Tech. Phys. Lett. 23, 746 (1997).
10. H. Wirth, D. Panknin, W. Skorupa, and E. Niemann, Appl. Phys. Lett. 74, 979 (1999).
11. D. Panknin, H. Wirth, A. Mücklich, and W. Skorupa, Mater. Sci. Eng., B 61-62, 363 (1999).
12. P. W. Voorhees, Annu. Rev. Mater. Sci., 197 (1992).