Characterization of high-k Ta2Si oxidized films on 4H-SiC and Si substrates as gate insulator

Journal of the Electrochemical Society

Volumn 152, Issue 4, 2005, Pages

  Perez Tomas A ^a   Godignon, P ^a   Montserrat, J ^a   Millan J ^a   Mestres, N ^b   Vennegues, P ^c   Stoemenos, J ^d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c Cent de Recherche sur   (France)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; OXIDATION; PERMITTIVITY; SEMICONDUCTING SILICON; SILICON CARBIDE; TANTALUM COMPOUNDS; THERMAL EFFECTS;

GATE INSULATORS; LEAKAGE CURRENT DENSITY; METAL-INSULATOR SEMICONDUCTORS (MIS); OXIDIZED FILMS;

THIN FILMS;

EID: 18444372017     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1861995     Document Type: Article

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