Reduction of leakage current in chemical-vapor-deposited ta2o5 thin films by furnace N2O annealing

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 1027-1029

  Sun, S C ^a   Chen, T F ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; TANTALUM COMPOUNDS;

TIME DEPENDENT DIELECTRIC BREAKDOWN;

THIN FILMS;

EID: 0031165540     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585562     Document Type: Article

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