Electronic properties of SiON/HfO2 insulating stacks on 4H-SIC (0001)

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1361-1364

  Afanas'ev, V V ^a   Campbell, S A ^b   Cheong, K Y ^c,d   Ciobanu, F ^e   Dimitrijev, S ^c   Pensl, G ^e   Stesmans, A ^a   Zhong, L ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF MINNESOTA   (United States)

^c GRIFFITH UNIVERSITY   (Australia)

^d SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Insulating stack; Interface traps; Silicon oxynitride; Thermal oxidation

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTANCE; ELECTRODES; INSULATING MATERIALS; NITRIDES; OXIDATION; PERMITTIVITY;

INSULATING STACK; INTERFACE TRAPS; SILICON OXYNITRIDE; THERMAL OXIDATION;

SILICON CARBIDE;

EID: 8744276615     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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